Solid state DTV transmitters

Author

Davis, Carlton ; Hawkins, Jack ; Einolf, Charles, Jr.

Author_Institution

Electron. Sensors & Syst. Div., Northrop Grumman Corp., Baltimore, MD, USA

Volume

43

Issue

3

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

252

Lastpage

260

Abstract

The developments in RF power transistor technology makes solid state transmitters economically attractive for UHF DTV terrestrial transmissions. These transmitters will probably use silicon bipolar, MOS or silicon carbide static induction transistors (SIT) in the RF power amplifiers. This paper examines these RF transistor technologies. In addition, this paper provides an overview of a typical DTV solid state transmitter. The authors have conducted DTV transmission tests and demonstrations using a silicon carbide, solid state transmitter. This paper provides a brief description of these tests

Keywords

UHF power amplifiers; digital television; power amplifiers; radio transmitters; static induction transistors; television transmitters; DTV transmission tests; LDMOS; MOS transistors; MOSFET; RF power amplifiers; RF power transistor technology; Si; SiC; UHF DTV terrestrial transmissions; VMOS; digital TV; silicon bipolar SIT transistors; silicon carbide SIT transistors; solid state DTV transmitters; Digital TV; MOSFETs; Power amplifiers; Power generation economics; Power transistors; Radio frequency; Silicon carbide; Solid state circuits; Testing; Transmitters;

fLanguage

English

Journal_Title

Broadcasting, IEEE Transactions on

Publisher

ieee

ISSN

0018-9316

Type

jour

DOI

10.1109/11.632898

Filename

632898