Title :
Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate
Author :
Matsuo, S. ; Tateno, K. ; Nakahara, T. ; Tsuda, H. ; Kurokawa, T.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
6/19/1997 12:00:00 AM
Abstract :
The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1 mA and the maximum output power was 2.45 mW for a 15 μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit
Keywords :
distributed Bragg reflector lasers; elemental semiconductors; integrated optoelectronics; large scale integration; laser cavity resonators; polymer films; semiconductor lasers; silicon; substrates; surface emitting lasers; wafer bonding; 15 micron; 2.45 mW; 3.1 mA; DBR laser; GaAs-AlGaAs; OEIC; Si; Si LSI circuit; Si substrate; VCSEL; hybrid integration; photonic devices; polyimide bonding; surface emitting laser; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970752
