Title :
Vertical cavity lasers based on vertically coupled quantum dots
Author :
Lott, J.A. ; Ledentsov, N.N. ; Ustinov, V.M. ; Egorov, A.Yu. ; Zhukov, A.E. ; Kop, P.S. ; Alferov, Zh.I. ; Bimberg, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wright Res. & Dev. Center, Wright-Patterson AFB, OH, USA
fDate :
6/19/1997 12:00:00 AM
Abstract :
Ground state lasing is reported for vertical cavity lasers containing three-period InGaAs-GaAs vertically coupled quantum dot active regions. The structures include selectively oxidised AlO current apertures and AlO-GaAs reflectors. Experimental devices emitting near 1.0 μm operate continuous wave at 20°C with threshold currents <200 μA and peak power conversion efficiencies exceeding 10%
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1 micron; 10 percent; 20 C; 200 muA; AlO-GaAs; AlO/GaAs reflectors; DBR laser; InGaAs-GaAs; InGaAs-GaAs active region; VCSEL; ground state lasing; selectively oxidised AlO current apertures; vertical cavity lasers; vertically coupled quantum dots;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970785
