Title :
Specific Contact Resistance of Phase Change Materials to Metal Electrodes
Author :
Roy, Deepu ; Zandt, Micha A A ; Wolters, Rob A M
Author_Institution :
NXP Semicond., NXP-TSMC Res. Center, Eindhoven, Netherlands
Abstract :
For phase change random access memory (PCRAM) cells, it is important to know the contact resistance of phase change materials (PCMs) to metal electrodes at the contacts. In this letter, we report the systematic determination of the specific contact resistance (ρc) of doped Sb2Te and Ge2Sb2Te5 to TiW metal electrodes. These data are reported for both the amorphous and the crystalline states of these PCMs. The temperature and voltage dependences of ρc are also studied. A detailed understanding of these contacts is essential for the scaling, design, device modeling, and optimization of PCRAM cells.
Keywords :
antimony compounds; contact resistance; germanium compounds; optimisation; phase change materials; random-access storage; titanium alloys; tungsten alloys; Ge2Sb2Te5-TiW; Sb2Te-TiW; contact resistance; metal electrodes; optimization; phase change materials; phase change random access memory; Annealing; Contacts; Current measurement; Electrical resistance measurement; Phase change materials; Resistance; Temperature measurement; $hbox{Ge}_{2} hbox{Sb}_{2}hbox{Te}_{5}$; Cross bridge Kelvin resistor (CBKR); doped $hbox{Sb}_{2}hbox{Te}$; phase change materials (PCMs); specific contact resistance $(rho_{c})$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2066256
