Title :
InGaAs/InP pin photodiode arrays on AlGaAs/GaAs waveguide films by solid source molecular beam epitaxy
Author :
Hsu, Shih-Hsiang ; Johnson, F.G. ; Tabatabaei, S.A. ; Agarwala, S. ; Hryniewicz, J.V. ; Towner, F.J. ; Chen, Y.J. ; Stone, D.R.
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
fDate :
6/19/1997 12:00:00 AM
Abstract :
The first solid-source molecular beam epitaxial growth of infrared-sensitive In0.53Ga0.47As on top or an AlGaAs/GaAs waveguide for monolithic 1.55 μm receiver applications has been demonstrated using a single, thin InP buffer layer to suppress dislocations. Mesa-type detector arrays were made by chemically assisted ion beam etching. Using a novel dense array fabrication technique, the integration of InGaAs optoelectronic devices with AlGaAs/GaAs waveguide films grown on a GaAs substrate has been demonstrated
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; optical films; optical waveguides; p-i-n photodiodes; photodetectors; 1.55 micron; AlGaAs-GaAs; AlGaAs/GaAs waveguide film; In0.53Ga0.47As-InP; InGaAs/InP pin photodiode array; buffer layer; chemically assisted ion beam etching; dislocations; fabrication; infrared receiver; mesa-type detector array; monolithic integration; optoelectronic device; solid source molecular beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970793
