DocumentCode
1314809
Title
High-Performance Pentacene Thin-Film Transistors Fabricated by Organic Vapor-Jet Printing
Author
Yun, Changhun ; Moon, Hanul ; Kang, Hyun Wook ; Kim, Mincheol ; Sung, Hyung Jin ; Yoo, Seunghyup
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume
31
Issue
11
fYear
2010
Firstpage
1305
Lastpage
1307
Abstract
Organic vapor-jet printing, a maskless direct printing method, is used to fabricate high-performance pentacene thin-film transistors. By combining the optimal carrier gas temperature and the surface treatment of gate dielectrics, a mobility of 0.46 (±0.03) cm2 V-1 s-1 and an on-off ratio greater than 107 are achieved. Morphological analyses indicate that the relatively high carrier gas temperature and low surface energy of the dielectric surface are the keys in achieving the level of performance comparable to that of devices based on conventional technologies.
Keywords
dielectric materials; masks; surface treatment; thin film transistors; gate dielectrics; maskless direct printing; optimal carrier gas temperature; organic vapor-jet printing; pentacene thin-film transistors; surface treatment; Dielectrics; Organic thin film transistors; Pentacene; Printing; Surface treatment; Organic thin-film transistor (OTFT); organic vapor-jet printing (OVJP); pentacene; thin-film growth;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2064752
Filename
5565418
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