• DocumentCode
    1314809
  • Title

    High-Performance Pentacene Thin-Film Transistors Fabricated by Organic Vapor-Jet Printing

  • Author

    Yun, Changhun ; Moon, Hanul ; Kang, Hyun Wook ; Kim, Mincheol ; Sung, Hyung Jin ; Yoo, Seunghyup

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    31
  • Issue
    11
  • fYear
    2010
  • Firstpage
    1305
  • Lastpage
    1307
  • Abstract
    Organic vapor-jet printing, a maskless direct printing method, is used to fabricate high-performance pentacene thin-film transistors. By combining the optimal carrier gas temperature and the surface treatment of gate dielectrics, a mobility of 0.46 (±0.03) cm2 V-1 s-1 and an on-off ratio greater than 107 are achieved. Morphological analyses indicate that the relatively high carrier gas temperature and low surface energy of the dielectric surface are the keys in achieving the level of performance comparable to that of devices based on conventional technologies.
  • Keywords
    dielectric materials; masks; surface treatment; thin film transistors; gate dielectrics; maskless direct printing; optimal carrier gas temperature; organic vapor-jet printing; pentacene thin-film transistors; surface treatment; Dielectrics; Organic thin film transistors; Pentacene; Printing; Surface treatment; Organic thin-film transistor (OTFT); organic vapor-jet printing (OVJP); pentacene; thin-film growth;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2064752
  • Filename
    5565418