Title :
High-Performance Pentacene Thin-Film Transistors Fabricated by Organic Vapor-Jet Printing
Author :
Yun, Changhun ; Moon, Hanul ; Kang, Hyun Wook ; Kim, Mincheol ; Sung, Hyung Jin ; Yoo, Seunghyup
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
Organic vapor-jet printing, a maskless direct printing method, is used to fabricate high-performance pentacene thin-film transistors. By combining the optimal carrier gas temperature and the surface treatment of gate dielectrics, a mobility of 0.46 (±0.03) cm2 V-1 s-1 and an on-off ratio greater than 107 are achieved. Morphological analyses indicate that the relatively high carrier gas temperature and low surface energy of the dielectric surface are the keys in achieving the level of performance comparable to that of devices based on conventional technologies.
Keywords :
dielectric materials; masks; surface treatment; thin film transistors; gate dielectrics; maskless direct printing; optimal carrier gas temperature; organic vapor-jet printing; pentacene thin-film transistors; surface treatment; Dielectrics; Organic thin film transistors; Pentacene; Printing; Surface treatment; Organic thin-film transistor (OTFT); organic vapor-jet printing (OVJP); pentacene; thin-film growth;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2064752