• DocumentCode
    1314823
  • Title

    Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In 0.53Ga0.47As cap layer and SiO2 dielectric capping

  • Author

    Lee, J.H. ; Si, S.K. ; Moon, Y.B. ; Yoon, E.J. ; Kim, S.J.

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • Volume
    33
  • Issue
    13
  • fYear
    1997
  • fDate
    6/19/1997 12:00:00 AM
  • Firstpage
    1179
  • Lastpage
    1181
  • Abstract
    SiO2 has been successfully used as the dielectric capping material for bandgap tuning in InGaAs/InP MQW for the first time where the InGaAs cap layer is used simultaneously. The samples showed large blue shifts of bandgap energy after RTA treatment (185 and 230 meV at 750 and 850°C, respectively). Samples with SiO2-InP or SiNx-InGaAs cap layer combinations did not show significant energy shifts
  • Keywords
    III-V semiconductors; diffusion; energy gap; gallium arsenide; indium compounds; rapid thermal annealing; semiconductor doping; semiconductor quantum wells; 185 meV; 230 meV; 750 degC; 850 degC; In0.53Ga0.47As-InP; RTA treatment; SiN-InGaAs; SiO2; SiO2-InP; bandgap energy; bandgap tuning; cap layer; dielectric capping; energy shifts; impurity free vacancy diffusion; multiquantum well structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970761
  • Filename
    601017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1314823