Title :
Molecular beam deposition of n-type polycrystalline In0.6Ga0.4As for high resistances in heterojunction bipolar transistor integrated circuits
Author :
Mochizuki, K. ; Oka, T. ; Nakamura, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
6/19/1997 12:00:00 AM
Abstract :
100 nm thick n-type polycrystalline In0.6Ga0.4 As layers have been grown on SiO2 by molecular beam epitaxy and their electrical properties have been investigated using Au/Pt/Ti as non-alloyed ohmic metals. A moderate sheet resistance of 4.7×102 Ω/□ was obtained, together with a low specific contact resistance of 8×10-8 Ω cm 2. This material should be useful for attaining high resistances in heterojunction bipolar transistor integrated circuits
Keywords :
III-V semiconductors; bipolar integrated circuits; contact resistance; gallium arsenide; gold; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; ohmic contacts; platinum; semiconductor epitaxial layers; semiconductor growth; titanium; 100 nm; Au-Pt-Ti-In0.6Ga0.4As-SiO2-GaAs; contact resistance; electrical properties; heterojunction bipolar transistor integrated circuits; molecular beam deposition; nonalloyed ohmic metals; sheet resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970796
