Title :
IR photodetector with exclusion effect and self-filtering n+ layer
Author :
Djuric, Z. ; Jovic, V. ; Matic, M. ; Jaksic, Zoran
Author_Institution :
Inst. of Microelectron. Technol. & Single Crystals, Beograd, Yugoslavia
fDate :
6/21/1990 12:00:00 AM
Abstract :
A ´vertical´ exclusion homoepitaxial n+n structure for infrared photodetectors in nonequilibrium with certain advantages when comparison with ´horizontal´ n+n structures is proposed. The exclusion effect was observed at 220 K in experimental InSb n+n structures fabricated by liquid phase epitaxy. It was not possible to utilised the benefits of the suppression of Auger recombination because of the low Shockley-Read lifetime in the substrate.
Keywords :
III-V semiconductors; indium antimonide; infrared detectors; photodetectors; semiconductor technology; 220 K; IR photodetector; InSb; LPE; Shockley-Read lifetime; exclusion effect; exclusion homoepitaxial n +n structure; liquid phase epitaxy; self-filtering n + layer; semiconductors; suppression of Auger recombination; vertical structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900607
