• DocumentCode
    1314954
  • Title

    IR photodetector with exclusion effect and self-filtering n+ layer

  • Author

    Djuric, Z. ; Jovic, V. ; Matic, M. ; Jaksic, Zoran

  • Author_Institution
    Inst. of Microelectron. Technol. & Single Crystals, Beograd, Yugoslavia
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    929
  • Lastpage
    931
  • Abstract
    A ´vertical´ exclusion homoepitaxial n+n structure for infrared photodetectors in nonequilibrium with certain advantages when comparison with ´horizontal´ n+n structures is proposed. The exclusion effect was observed at 220 K in experimental InSb n+n structures fabricated by liquid phase epitaxy. It was not possible to utilised the benefits of the suppression of Auger recombination because of the low Shockley-Read lifetime in the substrate.
  • Keywords
    III-V semiconductors; indium antimonide; infrared detectors; photodetectors; semiconductor technology; 220 K; IR photodetector; InSb; LPE; Shockley-Read lifetime; exclusion effect; exclusion homoepitaxial n +n structure; liquid phase epitaxy; self-filtering n + layer; semiconductors; suppression of Auger recombination; vertical structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900607
  • Filename
    82855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1314954