The epitaxial transistor

Epitaxial material growth techniques describing the apparatus and procedures for silicon and germanium are given. Epitaxial device fabrication steps are outlined and a description of the procedures used in producing epitaxial mesa transistors is presented. A summary of device performance data is given, comparing epitaxial transistor characteristics with those of nonepitaxial transistors of the same type. Mention is made of the observed reliability and the reasons why improved reliability should be expected with the use of epitaxial mesa transistors.