Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents

We propose an experimental method that determines junction temperatures in light-emitting diodes by measuring currents while holding the low forward voltages constant. In this procedure, we first calibrate current-temperature-rela- tionship parameters under the condition of negligible thermal generation. With one of the two parametric values, we discover the existence of a forward voltage peak that yields most sensitive measurements of the junction temperature. Results show a nearly linear relationship between the algorithmic currents and temperature reciprocals with high testing precision.