DocumentCode :
1315135
Title :
U. S. Army Advancement in Transistor Reliability Through Manufacturing Process Improvements
Author :
Hakim, E.B. ; Reich, B.
Author_Institution :
Solid State and Frequency Control Division, U. S. Army Electronics Labs., Fort Monmouth, N. J.
Issue :
2
fYear :
1965
Firstpage :
94
Lastpage :
99
Abstract :
This report outlines transistor reliability improvements achieved by semiconductor manufacturers who incorporated improved processing techniques into their lines. These advancements were achieved under the project known as the Production Engineering Measures program for transistor reliability improvement. The procedures reported upon include the status of reliability of the particular devices used in the program (in most cases the entire family of devices); the methods of monitoring relative reliability improvements; and advanced techniques of specific processes such as diffusion, metalization, lead bonding, packaging, and photolithography.
Keywords :
Aluminum; Contracts; Diffusion bonding; Germanium alloys; Manufacturing processes; Production; Semiconductor device reliability; Silicon; Surface treatment; Transistors;
fLanguage :
English
Journal_Title :
Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9529
Type :
jour
DOI :
10.1109/TR.1965.5214883
Filename :
5214883
Link To Document :
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