DocumentCode :
1315180
Title :
Output voltage analysis for the MOS Colpitts oscillator
Author :
Mayaram, Kartikeya
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Volume :
47
Issue :
2
fYear :
2000
fDate :
2/1/2000 12:00:00 AM
Firstpage :
260
Lastpage :
263
Abstract :
An analysis of the MOS Colpitts oscillator is presented that includes MOSFET operation in the cutoff linear, and saturation regions of operation. The steady-state output voltages calculated from this analysis are in excellent agreement with SPICE3 simulations for a wide range of circuit parameters. An application of this analysis to the synthesis of a Colpitts oscillator design is also provided
Keywords :
MOS analogue integrated circuits; SPICE; circuit simulation; integrated circuit design; network parameters; radiofrequency oscillators; MOS Colpitts oscillator; SPICE3 simulations; circuit parameters; cutoff linear region; oscillator design; output voltage analysis; saturation region; steady-state output voltages; Analytical models; Circuit simulation; Circuit synthesis; Coupling circuits; Integral equations; MOSFET circuits; Radio frequency; Steady-state; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7122
Type :
jour
DOI :
10.1109/81.828582
Filename :
828582
Link To Document :
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