Title :
Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes
Author :
Baile Chen ; Qiugui Zhou ; McIntosh, D.C. ; Jinrong Yuan ; Yaojia Chen ; Wenlu Sun ; Campbell, Joe C. ; Holmes, Archie L.
Author_Institution :
Dept. of Electr. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
An antireflection coating was created for InP-based pin photodiodes using natural lithography with 100 nm-diameter SiO2 spheres. The surface showed a normal-incidence reflection of <;5% for wavelengths from 900 to 2500<;nm. Photodiodes with surface texturing showed an enhancement in quantum efficiency with no dark current degradation.
Keywords :
III-V semiconductors; antireflection coatings; indium compounds; nanolithography; p-i-n photodiodes; semiconductor diodes; silicon compounds; surface texture; InP; InP-based pin photodiodes; SiO2; antireflection coating; antireflective layer; natural lithography nanosphere texturing; normal-incidence reflection; quantum efficiency; size 100 nm; surface texturing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.2849
