Title :
Packaged 2*2 array of InGaAs/InP multiple quantum well modulators grown by double-sided epitaxy
Author :
Rejman-Greene, M.A.Z. ; Scott, E.G.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
6/21/1990 12:00:00 AM
Abstract :
Epitaxial growth of InGaAs/InP MQW structures on both sides of an InP substrate is used to enhance the performance of planar optical modulators to 3.8 dB for -10 V change in bias. 2*2 arrays of such devices, operating at 1.51 mu m, are realised by means of a novel packaging scheme.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical modulation; packaging; semiconductor growth; 1.51 micron; 2*2 arrays; InGaAs-InP; InP substrate; MQW structures; double-sided epitaxy; epitaxial semiconductor growth; gas-source MBE; multiple quantum well; packaging scheme; planar optical modulators; quantum confined Stark effect; two-dimensional arrays;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900617
