Piezoresistive Sensing Performance of Junctionless Nanowire FET

Author

Singh, Pushpapraj ; Miao, Jianmin ; Pott, Vincent ; Park, Woo-Tae ; Kwong, Dim-Lee

Author_Institution

Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore

Volume

33

Issue

12

fYear

2012

Firstpage

1759

Lastpage

1761

Abstract

This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing the channel doping ten times from 6.7 × 10¹⁹ to 6.7 × 10¹⁸ cm^-3. Significant variations of GF and LFN are observed when the JL-NWFET is operated from subthreshold to on-state regime, and resolution (minimum detectable strain) is improved four times compared to inversion-mode NWFET. The simple fabrication and superior resolution formulate JL-NWFET as a promising sensing element for miniaturized nanoelectromechanical sensors.

Keywords

MOSFET; doping; electric sensing devices; nanoelectromechanical devices; nanoelectronics; nanowires; piezoresistance; piezoresistive devices; ON-state regime; channel doping; gate bias; gauge factor; inversion-mode NWFET; junctionless nanowire FET; junctionless nanowire field-effect transistor parameter; low-frequency noise; miniaturized nanoelectromechanical sensor; piezoresistance; piezoresistive sensing performance; Doping; FETs; Nanoelectromechanical systems; Nanowires; Piezoresistance; Sensors; Silicon; Junctionless field-effect transistor (JLFET); piezoresistivity; sensor resolution; strained silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2217112

Filename

6329399