Abstract :
The effect of n-type dopant species on the compensating behaviour of oxygen implants has been studied using Hall effect and C/V profiling techniques. Stronger compensation is retained if silicon rather than selenium is used to form the n-type layer. The compensation has been separated into damage related and oxygen atom related mechanisms, both of which are shown to be n-type dopant sensitive. The dopant sensitivity of the damage related compensation is tentatively described by assuming that localised regions of stoichiometric imbalance are introduced by the oxygen implantation,which promotes activation on the arsenide site. However, the reason for the dopant sensitivity of the oxygen atom related mechanism remains unclear.
Keywords :
Hall effect; III-V semiconductors; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; ion implantation; oxygen; semiconductor doping; C/V profiling techniques; GaAs:O; Hall effect; activation; compensating effects; damage related compensation; dopant sensitivity; localised regions; n-type dopant species;
