Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients

Author

Bennett, W.G. ; Schrimpf, R.D. ; Hooten, N.C. ; Reed, R.A. ; Kauppila, J.S. ; Weller, R.A. ; Warren, K.M. ; Mendenhall, M.H.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

59

Issue

6

fYear

2012

Firstpage

2704

Lastpage

2709

Abstract

An efficient method for estimating the characteristics of ion-induced current pulse transients is presented and related to the corresponding mechanisms of single-event charge collection. The method is focused on characterizing the prompt response of a reverse biased p-n junction under relatively low level conditions (LET <; 10 MeV-cm²/mg). This method is shown to be accurate when compared to 3D finite element simulations, while reducing solution time such that current pulse calculations can be run in series with both energy deposition and circuit simulations.

Keywords

characteristics measurement; circuit simulation; finite element analysis; p-n junctions; transients; 3D finite element simulations; circuit simulations; current pulse calculations; energy deposition; ion-induced current pulse characteristics; low level conditions; radiation-induced current transient characteristics; reverse biased p-n junction; single-event charge collection; Circuit simulation; Finite element methods; MOSFET circuits; Semiconductor process modeling; Single event transient; Transient analysis; Charge collection; Monte-Carlo radiation transport code; drift transport; efficient characterization; fast transient; prompt response; single-event effects (SEE); single-event transient (SET);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2218830

Filename

6329458