Title :
Research on Performance of Red Vertical AlGaInP/GaAs Light-Emitting Diodes Influenced by Current Crowding
Author :
Malyutenko, V.K. ; Bolgov, S.S. ; Tykhonov, A.N. ; Vilisov, A.A.
Author_Institution :
Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The authors show that the performance of red vertical AlGaInP/GaAs light-emitting diodes is compromised by the current crowding (CC) effect in the moderate-current (space charge region dominates in the device performance) and high-current (series resistance dominates in the equivalent circuit of a device) domains. Depending on the contact pattern, a remarkable part of the performance degradation comes as a result of the electrical power lost on the series resistance (~17%). CC affects the ideality factor and causes the current spreading length to decrease from 425 at low currents to 75 at a current of 250 mA.
Keywords :
III-V semiconductors; aluminium compounds; electrical contacts; equivalent circuits; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; space charge; AlGaInP-GaAs; contact pattern; current crowding; equivalent circuit; moderate-current; red vertical light-emitting diodes; series resistance; space charge region; Contacts; Gallium arsenide; Light emitting diodes; Performance evaluation; Resistance; Shape; Substrates; AlGaInP/GaAs; current crowding (CC); efficiency droop; light-emitting devices (LEDs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2167225