Title :
21-kV SiC BJTs With Space-Modulated Junction Termination Extension
Author :
Miyake, Hiroki ; Okuda, Takafumi ; Niwa, Hiroki ; Kimoto, Tsunenobu ; Suda, Jun
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
We report here 20-kV-class small-area (0.035 mm2) 4H-SiC bipolar junction transistors. We implemented edge termination techniques featuring two-zone junction termination extension and space-modulated rings. On-state characteristics showed a current gain of 63 and a specific on-resistance of 321 mΩ·cm2, which is slightly below the SiC unipolar limit. We achieved the open-base blocking voltage of 21 kV at a leakage current of 0.1 mA/cm2, which is the highest blocking voltage among any semiconductor switching devices.
Keywords :
bipolar transistors; leakage currents; silicon compounds; wide band gap semiconductors; BJT; SiC; bipolar junction transistors; edge termination techniques; leakage current; on-state characteristics; open-base blocking voltage; semiconductor switching devices; space-modulated junction termination extension; space-modulated rings; two-zone junction termination extension; voltage 20 kV; voltage 21 kV; Bipolar transistors; Junctions; Leakage current; Silicon carbide; Transistors; Voltage measurement; Bipolar junction transistor (BJT); edge termination; silicon carbide (SiC); ultrahigh voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2215004
