Title :
Angle resolved X-ray photoemission study of rapid thermal annealing applied to different GaAs and InP samples
Author :
Quemerais, A. ; Jezequel, G. ; L´Haridon, H. ; Favennec, P.N. ; Salvi, M.
Author_Institution :
Lab. de Spectroscopie du Solide, Rennes Univ., France
fDate :
7/19/1990 12:00:00 AM
Abstract :
The crystalline order and stoichiometry of the near surface of GaAs and InP substrates after rapid thermal annealing using a silicon wafer as a protecting cap have been deduced from angle resolved X-ray photo-emission measurements. A monolayer of As or P appears to be enough to prevent further material decomposition. For implanted samples (up to 1014/cm2 Si), the crystalline order is restored after the rapid anneal (without any important stoichiometry modification).
Keywords :
III-V semiconductors; X-ray photoelectron spectra; annealing; gallium arsenide; indium compounds; stoichiometry; GaAs; InP; X-ray photoemission study; crystalline order; implanted samples; material decomposition; monolayer; protecting cap; rapid thermal annealing; stoichiometry;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900724
