DocumentCode :
1315576
Title :
Evaluation of single ohmic metallisations for contacting both p- and n-type GaInAs
Author :
Shantharama, L.G. ; Schumacher, H. ; Leblanc, H.P. ; Esagui, R. ; Bhat, R. ; Koza, M.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Volume :
26
Issue :
15
fYear :
1990
fDate :
7/19/1990 12:00:00 AM
Firstpage :
1127
Lastpage :
1129
Abstract :
The contact resistivity of various non-alloyed ohmic contact metallisations on both n- and p-type Ga0.47In0.53As has been investigated. Pd/AuGe metallisation was found to be most suitable when layers of both doping types were to be contacted in a single step, having lower contact resistivities on p+-GaInAs than Ti/Pt/Au and AuBe/Pt/Au. On n+-GaInAs, the contact resistivity was found to be almost independent of the metallisation used.
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; gold; gold alloys; indium compounds; metallisation; ohmic contacts; palladium; platinum; titanium; GaInAs-AuBe-Pt-Au; GaInAs-Pd-AuGe; GaInAs-Ti-Pt-Au; contact resistivity; doping types; single ohmic metallisations;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900729
Filename :
82899
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1315576
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