Title :
Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD
Author :
Talneau, A. ; Rondi, D. ; Krakowski, M.
Author_Institution :
Central Res. Lab., Thomson-CSF, Orsay
fDate :
5/12/1988 12:00:00 AM
Abstract :
1.52 μm GaInAsP/InP DFB laser diodes with a buried ridge structure were fabricated entirely by MOCVD, with a second-order corrugation on the GaInAsP guiding layer. The 5 mA minimum threshold current achieved is believed to be the lowest yet reported for DFB lasers. Single longitudinal-mode operation with a side-mode suppression ratio greater than 35 dB was obtained from 20°C (up to 16 mW) to 90°C (up to 3 mW)
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.52 micron; 20 to 90 degC; 3 to 16 mW; 5 mA; DFB laser diodes; GaInAsP-InP; MOCVD; buried ridge structure; low threshold operation; minimum threshold current; second-order corrugation; semiconductor laser; side-mode suppression ratio; single longitudinal mode operation;
Journal_Title :
Electronics Letters
