Title :
A Capacitance-Ratio-Modulated Current Front-End Circuit With Pulsewidth Modulation Output for a Capacitive Sensor Interface
Author :
Sheu, Meng-Lieh ; Hsu, Wei-Hung ; Tsao, Lin-Jie
Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli, Taiwan
Abstract :
This paper presents a front-end circuit with pulsewidth modulation (PWM) output for a capacitive sensor interface. A single-MOSFET-based capacitance-ratio-modulated current (CRMC) circuit is proposed to transform the sensed capacitance into a current proportional to a capacitance ratio. The proposed single-MOSFET-based CRMC circuit not only saves a lot of chip area but also lowers power consumption. Then, a dual-slope integration circuit transforms further the modulated current into PWM output. A prototype chip is designed and fabricated with a 0.35-μm complementary metal-oxide-semiconductor process and has a core area of 0.09 mm2. The measurement results of the prototype chip demonstrate an accuracy value of up to 9.3 bit with 54-μW power consumption. The microwatt power consumption and the small chip area of the proposed front-end circuit make it very suitable for a capacitive sensor interface in smart sensor chips.
Keywords :
CMOS integrated circuits; capacitance measurement; capacitive sensors; power consumption; pulse width modulation; CRMC circuit; PWM output; capacitive sensor interface; complementary metal-oxide-semiconductor process; dual-slope integration circuit transforms; power 54 muW; power consumption; pulsewidth modulation output; single-MOSFET-based capacitance-ratio-modulated current circuit; size 0.35 mum; Capacitance; Capacitive sensors; Clocks; Intelligent sensors; Pulse width modulation; Switches; Capacitance measurement; dual-slope integration; smart sensor interface;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2011.2161929