Title :
Monolithic integration of 1.5 mu m optical preamplifier and PIN photodetector with a gain of 20 dB and a bandwidth of 35 GHz
Author :
Wake, D. ; Judge, S.N. ; Spooner, T.P. ; Duncan, W.J. ; Henning, I.D. ; O´Mahony, M.J.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
7/19/1990 12:00:00 AM
Abstract :
The monolithic integration of a semiconductor laser optical preamplifier and an edge-coupled PIN photodiode has been demonstrated for the first time. Although the fabrication involved is relatively simple, a maximum gain (excluding input coupling loss) of 20 dB and a 3 dB bandwidth of 35 GHz has been measured for this device.
Keywords :
integrated optoelectronics; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; receivers; semiconductor junction lasers; 1.5 micron; 20 dB; 35 GHz; PIN photodetector; bandwidth; edge-coupled PIN photodiode; fabrication; gain; monolithic integration; optical receivers; p-i-n photodiodes; semiconductor laser optical preamplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900754
