DocumentCode
1315774
Title
InAlAs/InGaAs/InP junction HEMTs
Author
Boos, J.B. ; Binari, S.C. ; Kruppa, W. ; Hier, H.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
26
Issue
15
fYear
1990
fDate
7/19/1990 12:00:00 AM
Firstpage
1172
Lastpage
1173
Abstract
A junction high electron mobility transistor (JHEMT) has been demonstrated in the InAlAs/InGaAs/InP material system. Selective Zn diffusion is used to form a shallow p+ gate region within a planar-doped HEMT structure grown by MBE. These devices exhibit an extrinsic DC trans-conductance of 140 mS/mm for a 1.6 mu m gate length and good pinchoff characteristics.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; zinc; 1.6 micron; InAlAs-InGaAs-InP; InGaAs:Zn; InP substrates; JHEMT; MBE; Zn diffusion; characteristics; extrinsic DC trans-conductance; gate length; junction HEMTs; junction high electron mobility transistor; pinchoff characteristics; planar-doped HEMT structure; semiconductors; shallow p + gate region;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900758
Filename
82928
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