DocumentCode
1315809
Title
Integration of GaAs MESFETs and lithium niobate optical switches using epitaxial lift-off
Author
O´Donnel, A.C. ; Pollentier, I. ; Demeester, Piet ; Van Daele, Peter
Author_Institution
GEC-Marconi Res. Centre, Chelmsford, UK
Volume
26
Issue
15
fYear
1990
fDate
7/19/1990 12:00:00 AM
Firstpage
1179
Lastpage
1181
Abstract
The first successful integration of GaAs MESFETs and lithium niobate optical switches using the epitaxial lift-off technique is reported. The interferometric switch produced an extinction ratio >30 dB at 1300 nm for an input voltage swing to the MESFET of only 240 mV. This realisation holds out interesting prospects for the development of novel, efficient and cost-effective quasi-monolithic integrated optoelectronic circuits.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated optoelectronics; lithium compounds; optical switches; optical waveguide components; 1300 nm; GaAs; epitaxial lift-off; extinction ratio; input voltage swing; interferometric switch; quasi-monolithic integrated optoelectronic circuits; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900763
Filename
82933
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