Title :
Integration of GaAs MESFETs and lithium niobate optical switches using epitaxial lift-off
Author :
O´Donnel, A.C. ; Pollentier, I. ; Demeester, Piet ; Van Daele, Peter
Author_Institution :
GEC-Marconi Res. Centre, Chelmsford, UK
fDate :
7/19/1990 12:00:00 AM
Abstract :
The first successful integration of GaAs MESFETs and lithium niobate optical switches using the epitaxial lift-off technique is reported. The interferometric switch produced an extinction ratio >30 dB at 1300 nm for an input voltage swing to the MESFET of only 240 mV. This realisation holds out interesting prospects for the development of novel, efficient and cost-effective quasi-monolithic integrated optoelectronic circuits.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated optoelectronics; lithium compounds; optical switches; optical waveguide components; 1300 nm; GaAs; epitaxial lift-off; extinction ratio; input voltage swing; interferometric switch; quasi-monolithic integrated optoelectronic circuits; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900763
