• DocumentCode
    1315931
  • Title

    New distributed package model for the dual gate FET

  • Author

    Xue, Hongchao ; Howes, M.J. ; Snowden, C.M.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Leeds Univ., UK
  • Volume
    26
  • Issue
    15
  • fYear
    1990
  • fDate
    7/19/1990 12:00:00 AM
  • Firstpage
    1207
  • Lastpage
    1209
  • Abstract
    A new distributed package model for a dual gate MESFET is presented. This model is based on the physical structure of the device package and describes the package effects accurately. With its simple structure, this model can easily be characterised using S-parameter fitting procedures. It serves as an accurate engineering level model.
  • Keywords
    S-parameters; field effect transistors; packaging; semiconductor device models; S-parameter fitting procedures; distributed package model; dual gate FET; engineering level model; package effects; physical structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900781
  • Filename
    82951
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1315931