DocumentCode :
1316054
Title :
Electro-optic sampling using an external GaAs probe tip
Author :
Shinagawa, Mitsuru ; Nagatsuma, Tadao
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Volume :
26
Issue :
17
fYear :
1990
Firstpage :
1341
Lastpage :
1343
Abstract :
The first laser-diode-based external electro-optic (EO) sampling using a GaAs probe tip is described. This tip is a longitudinal electric field sensor, being therefore immune from optical crosstalk. The minimum detectable voltage is 16 mV/ square root (Hz). The EO sampling is compared with that of a conventional electrical sampling oscilloscope, and the two are shown to be in excellent agreement.
Keywords :
III-V semiconductors; electric field measurement; electric sensing devices; electro-optical devices; gallium arsenide; integrated circuit testing; laser beam applications; probes; IC testing; external GaAs probe tip; laser diode based external electrooptic sampling; longitudinal electric field sensor; minimum detectable voltage;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900864
Filename :
82973
Link To Document :
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