• DocumentCode
    1316126
  • Title

    Expanding the power-handling capabilities of harmonic-balance analysis by a parametric formulation of the MESFET model

  • Author

    Rizzoli, Vittorio

  • Author_Institution
    Dipartimento di Electtronica, Inf. e Sistemistica, Bologna Univ., Italy
  • Volume
    26
  • Issue
    17
  • fYear
    1990
  • Firstpage
    1359
  • Lastpage
    1361
  • Abstract
    A novel method for improving the convergence properties of the Newton iteration in the analysis of hardly driven nonlinear microwave FET circuits by the harmonic-balance technique is presented. The active device is described by a set of parametric equations allowing the exponential difference of the Schottky-barrier current on the applied voltage to be exactly implemented by means of well-behaved functions. As a result, the power-handling capabilities of the undamped Newton iteration become comparable to those of norm-reducing Newton methods based on conventional models. Furthermore, coupling parametric modelling with norm reduction results in an extremely robust analysis approach.
  • Keywords
    Schottky gate field effect transistors; harmonics; iterative methods; semiconductor device models; solid-state microwave circuits; MESFET model; Newton iteration; Schottky-barrier current; convergence properties; harmonic-balance analysis; nonlinear microwave FET circuits; parametric equations; parametric formulation; parametric modelling; power-handling capabilities; robust analysis; well-behaved functions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900874
  • Filename
    82983