DocumentCode :
1316126
Title :
Expanding the power-handling capabilities of harmonic-balance analysis by a parametric formulation of the MESFET model
Author :
Rizzoli, Vittorio
Author_Institution :
Dipartimento di Electtronica, Inf. e Sistemistica, Bologna Univ., Italy
Volume :
26
Issue :
17
fYear :
1990
Firstpage :
1359
Lastpage :
1361
Abstract :
A novel method for improving the convergence properties of the Newton iteration in the analysis of hardly driven nonlinear microwave FET circuits by the harmonic-balance technique is presented. The active device is described by a set of parametric equations allowing the exponential difference of the Schottky-barrier current on the applied voltage to be exactly implemented by means of well-behaved functions. As a result, the power-handling capabilities of the undamped Newton iteration become comparable to those of norm-reducing Newton methods based on conventional models. Furthermore, coupling parametric modelling with norm reduction results in an extremely robust analysis approach.
Keywords :
Schottky gate field effect transistors; harmonics; iterative methods; semiconductor device models; solid-state microwave circuits; MESFET model; Newton iteration; Schottky-barrier current; convergence properties; harmonic-balance analysis; nonlinear microwave FET circuits; parametric equations; parametric formulation; parametric modelling; power-handling capabilities; robust analysis; well-behaved functions;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900874
Filename :
82983
Link To Document :
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