• DocumentCode
    1316150
  • Title

    Carrier transport properties of Mg-doped InAlN films

  • Author

    Kim, Sungho ; Kim, H.J. ; Choi, Soon-Mi ; Lochner, Zachary ; Ryou, J.-H. ; Dupuis, Russell ; Kim, Heonhwan

  • Author_Institution
    Chonbuk National University, Republic of Korea
  • Volume
    48
  • Issue
    20
  • fYear
    2012
  • Firstpage
    1306
  • Lastpage
    1308
  • Abstract
    The carrier transport properties of 100 nm-thick Mg-doped InAlN films were investigated using a transmission line model. The electrical resistivity of InAlN:Mg films was 7400 Ωcm, indicating a semi-insulator. Temperature-dependent current-voltage measurements revealed that the predominant carrier transport is due to hopping conduction through deep-level defect states. The carrier transport at the metal contact/InAlN:Mg interface could be explained in terms of hopping conduction through deep-level states located 1.28 eV above the valence band.
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.2238
  • Filename
    6329586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316150