• DocumentCode
    1316191
  • Title

    Very low threshold current AlGaInP/GaxIn1-xP strained single quantum well visible laser diode

  • Author

    Katsuyama, Tomokazu ; Yoshida, Isao ; Shinkai, J. ; Hashimoto, Jun ; Hayashi, H.

  • Author_Institution
    Optoelectron. R&D Lab., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
  • Volume
    26
  • Issue
    17
  • fYear
    1990
  • Firstpage
    1375
  • Lastpage
    1377
  • Abstract
    The successful operation of a separate confinement heterostructure (SCH) AlGaInP/GaxIn1-xP (x=0.43) strained single quantum well (SSQW) laser has been achieved for the first time. A threshold current of 18 mA at 25 degrees C, the lowest value ever reported for AlGaInP/GaInP lasers, was obtained by a 10*200 mu m index guided laser diode at an emission wavelength of 691 nm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; semiconductor junction lasers; semiconductor quantum wells; 10 micron; 18 mA; 200 micron; 25 C; 691 nm; AlGaInP-Ga xIn 1-xP; SCH; emission wavelength; index guided laser diode; low threshold current; operation; semiconductors; separate confinement heterostructure; strained single quantum well; visible laser diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900884
  • Filename
    82993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316191