Title :
Temperature sensitivity of asymmetric Fabry-Perot modulators
Author :
Whitehead, Mark ; Stevens, P.J. ; Rivers, A. ; Parry, Guillaume ; Roberts, Jeffrey S. ; Button, C.
Abstract :
A study of the effect of temperature variations on the performance of an asymmetric Fabry-Perot reflection modulator (AFPM) with GaAs/AlGaAs multiple quantum wells (MQWs) is reported. The contrast remains over 10 dB for the 21 degrees C temperature range investigated indicating a fair level of temperature insensitivity and thus the suitability of the device for practical systems. The insertion loss increases from 3.5 dB at 25 degrees C to approximately 4.7 dB at 35 degrees C and approximately 5.4 dB at 45 degrees C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical modulation; semiconductor quantum wells; 25 to 45 C; 3.5 to 5.4 dB; GaAs-AlGaAs; MQWs; asymmetric Fabry-Perot modulators; asymmetric Fabry-Perot reflection modulator; contrast; effect of temperature variations; insertion loss; multiple quantum wells; operation; temperature insensitivity; temperature range; temperature sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900890
