• DocumentCode
    1316291
  • Title

    Very low resistivity ohmic contact to p-type GaAs using InxGa1-xAs interlayer

  • Author

    Janega, P.L. ; Chatenoud, F. ; Wasilewski, Z.

  • Author_Institution
    Div. of Phys., Nat. Res. Council Canada, Ottawa, Ont., Canada
  • Volume
    26
  • Issue
    17
  • fYear
    1990
  • Firstpage
    1395
  • Lastpage
    1397
  • Abstract
    A very low resistivity ohmic contact to 5*1017 at/cm3 beryllium doped GaAs was obtained by interposing a small bandgap p+InxGa1-xAs layer, grown by molecular beam epitaxy, between the p-GaAs and the metallisation. The thickness of the interlayer was less than 2000 AA. Specific contact resistance as low as 6.4*10-8 Omega cm2 was achieved. These contacts exhibit excellent adhesion, have smooth surfaces and are easy to fabricate.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; metallisation; molecular beam epitaxial growth; ohmic contacts; semiconductor epitaxial layers; semiconductor technology; semiconductor-metal boundaries; 2000 A; adhesion; easy to fabricate; low resistivity ohmic contact; metallisation; molecular beam epitaxy; scaling; semiconductors; small bandgap interlayer; smooth surfaces; specific contact resistance; thickness;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900897
  • Filename
    83006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316291