• DocumentCode
    1316317
  • Title

    Hybrid 11 Gbit/s parallel processing decision circuit using submicron silicon bipolar ICs

  • Author

    Runge, K. ; Young, James ; Bagheri, Mehdi ; Kipnis, I. ; Snapp, C.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    26
  • Issue
    17
  • fYear
    1990
  • Firstpage
    1402
  • Lastpage
    1404
  • Abstract
    The design and implementation of a submicron-silicon bipolar parallel processing master-slave D-type flip-flop decision circuit, operating at data rates as high as 11 Gbit/s is described. This is the fastest reported decision circuit for silicon bipolar technology. The ICs used in the hybrid circuit were fabricated using a 0.6 mu m, non-polysilicon emitter technology, and mounted in a package employing coplanar waveguides.
  • Keywords
    bipolar integrated circuits; digital integrated circuits; elemental semiconductors; flip-flops; hybrid integrated circuits; optical communication equipment; 0.6 micron; 11 Gbit/s; SONET; Si circuits; data rates; design; hybrid circuit; implementation; master-slave D-type flip-flop decision circuit; package employing coplanar waveguides; parallel processing decision circuit; semiconductors; submicron bipolar ICs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900901
  • Filename
    83010