DocumentCode
1316317
Title
Hybrid 11 Gbit/s parallel processing decision circuit using submicron silicon bipolar ICs
Author
Runge, K. ; Young, James ; Bagheri, Mehdi ; Kipnis, I. ; Snapp, C.
Author_Institution
Bellcore, Red Bank, NJ, USA
Volume
26
Issue
17
fYear
1990
Firstpage
1402
Lastpage
1404
Abstract
The design and implementation of a submicron-silicon bipolar parallel processing master-slave D-type flip-flop decision circuit, operating at data rates as high as 11 Gbit/s is described. This is the fastest reported decision circuit for silicon bipolar technology. The ICs used in the hybrid circuit were fabricated using a 0.6 mu m, non-polysilicon emitter technology, and mounted in a package employing coplanar waveguides.
Keywords
bipolar integrated circuits; digital integrated circuits; elemental semiconductors; flip-flops; hybrid integrated circuits; optical communication equipment; 0.6 micron; 11 Gbit/s; SONET; Si circuits; data rates; design; hybrid circuit; implementation; master-slave D-type flip-flop decision circuit; package employing coplanar waveguides; parallel processing decision circuit; semiconductors; submicron bipolar ICs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900901
Filename
83010
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