DocumentCode :
1316329
Title :
Effects of TMAH Treatment on Device Performance of Normally Off 
MOSFET
Author :
Ki-Won Kim ; Sung-Dal Jung ; Dong-Seok Kim ; Hee-Sung Kang ; Ki-Sik Im ; Jae-Joon Oh ; Jong-Bong Ha ; Jai-Kwang Shin ; Jung-Hee Lee
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Volume :
32
Issue :
10
fYear :
2011
Firstpage :
1376
Lastpage :
1378
Abstract :
Normally off Al2O3/GaN MOSFETs are fabricated by utilizing a simple tetramethylammonium hydroxide (TMAH) treatment as a postgate-recess process. The TMAH-treated device with a gate length of 2.5 μm exhibited excellent device performances, such as a threshold voltage of 3.5 V, a maximum drain current of 336 mA/mm, and a breakdown voltage of 725 V, along with extremely small gate leakage current of about 10-9 A/mm at Vgs = 15 V, which is approximately six orders lower in magnitude compared to that of the device without TMAH treatment.
Keywords :
MOSFET; aluminium compounds; gallium compounds; leakage currents; organic semiconductors; semiconductor device breakdown; Al2O3-GaN; MOSFET; TMAH treatment; TMAH-treated device; breakdown voltage; device performances; drain current; gate leakage current; gate length; postgate-recess process; size 2.5 mum; tetramethylammonium hydroxide treatment; threshold voltage; voltage 3.5 V; voltage 725 V; Aluminum gallium nitride; Etching; Gallium nitride; Leakage current; Logic gates; Surface morphology; GaN; MOSFETs; normally off; tetramethylammonium hydroxide (TMAH);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2163293
Filename :
6012506
Link To Document :
