Title :
Driving Current Enhancement of Strained Ge (110) p-Type Tunnel FETs and Anisotropic Effect
Author :
Lee, Moon Ho ; Chang, S.T. ; Wu, T.-H. ; Tseng, W.-N.
Author_Institution :
Inst. of Electro Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/ off current ratio, with an on current ~1 μA/μm and an off current ~10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.
Keywords :
elemental semiconductors; field effect transistors; germanium; leakage currents; Ge; anisotropic effect; driving current enhancement; leakage current; strained Ge (110) p-type tunnel FET; Anisotropic magnetoresistance; Logic gates; Silicon; Silicon germanium; Substrates; Transistors; Tunneling; Effective mass; subthreshold swing; tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2163379
