Title :
Monolithic InP cascode HEMT distributed amplifier from 5 to 40 GHz
Author :
Yuen, C. ; Pao, Y.C. ; Day, M. ; Nishimoto, C. ; Glenn, M. ; Bandy, S. ; Zdasiuk, G.
Author_Institution :
Varian Res. Center, Device Lab., Palo Alto, CA, USA
Abstract :
A monolithic 5 to 45 GHz distributed amplifier has been developed utilising 0.25 mu m InAlAs/InGaAs lattice matched cascode HEMTs with a mushroom gate profile as active devices. A measured gain as high as 15+or-1 dB from 5 to 40 GHz and a measured noise figure of 2.5-4 dB in the Ka-band were achieved.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; wideband amplifiers; 0.25 micron; 15 dB; 2.5 to 4 dB; 5 to 40 GHz; EHF; InAlAs-InGaAs-InP; InP substrate; Ka-band; LNA; MMIC; cascode HEMT distributed amplifier; gain; lattice matched; mushroom gate profile; noise figure; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900906
