Title :
Auger recombination in quantum well InGaAs
Author_Institution :
Max-Planck-Inst fur Festkorperforschung, Stuttgart, West Germany
Abstract :
The application of a realistic band structure shows that phonon-assisted Auger recombination with its weak temperature dependence dominates in quantum well semiconductors, a result in contrast to bulk materials. The experimental result where the Auger coefficient of quantum well InGaAs is nearly temperature independent is explained.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor quantum wells; Auger coefficient; Auger recombination; band structure; experimental result; phonon-assisted Auger recombination; quantum well InGaAs; quantum well semiconductors; semiconductors; weak temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900909
