• DocumentCode
    1316366
  • Title

    Auger recombination in quantum well InGaAs

  • Author

    Haug, A.

  • Author_Institution
    Max-Planck-Inst fur Festkorperforschung, Stuttgart, West Germany
  • Volume
    26
  • Issue
    17
  • fYear
    1990
  • Firstpage
    1415
  • Lastpage
    1416
  • Abstract
    The application of a realistic band structure shows that phonon-assisted Auger recombination with its weak temperature dependence dominates in quantum well semiconductors, a result in contrast to bulk materials. The experimental result where the Auger coefficient of quantum well InGaAs is nearly temperature independent is explained.
  • Keywords
    Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor quantum wells; Auger coefficient; Auger recombination; band structure; experimental result; phonon-assisted Auger recombination; quantum well InGaAs; quantum well semiconductors; semiconductors; weak temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900909
  • Filename
    83018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316366