DocumentCode :
1316383
Title :
Advances in bipolar VLSI
Author :
Wilson, George R.
Author_Institution :
Bipolar Integrated Technol. Inc., Beaverton, OR, USA
Volume :
78
Issue :
11
fYear :
1990
fDate :
11/1/1990 12:00:00 AM
Firstpage :
1707
Lastpage :
1719
Abstract :
Bipolar IC processes are reviewed, and the impact of BiCMOS technology on bipolar VLSI is discussed. The discussion covers standard emitter-coupled-logic (ECL) circuit configuration, on-chip line driving, output circuitry, series gating, ECL versus CML (current-mode logic), differential logic, noise margins, interconnect capacitance, bipolar VLSI transistor design and scaling, and processes for ECL VLSI
Keywords :
BIMOS integrated circuits; VLSI; bipolar integrated circuits; emitter-coupled logic; integrated circuit technology; integrated logic circuits; reviews; BiCMOS technology; CML; ECL; IC processes; bipolar VLSI; current-mode logic; differential logic; emitter-coupled-logic; interconnect capacitance; monolithic IC; noise margins; on-chip line driving; output circuitry; scaling; series gating; transistor design; BiCMOS integrated circuits; Bipolar integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Delay; Digital systems; Out of order; Power dissipation; Very large scale integration;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.63299
Filename :
63299
Link To Document :
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