Title :
Optically pumped GaAs surface-emitting laser with integrated Bragg reflector
Author :
Faist, J. ; Morier-Genoud, F. ; Martin, D. ; Ganiere, J.D. ; Reinhart, F. -K
Author_Institution :
Ecole Polytech., Federale de Lausanne, Switzerland
fDate :
5/12/1988 12:00:00 AM
Abstract :
Fabrication of a high-quality Fabry-Perot resonator with a GaAs active layer and two Bragg AlAs/(AlAs)2(GaAs)9 reflectors is reported. This structure lases CW at room temperature when photopumped. Mirror reflectivity of 97%, threshold pump power of 16 mW, and quantum efficiencies up to 7% are demonstrated
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser cavity resonators; optical pumping; semiconductor junction lasers; 16 mW; 7 percent; AlGaAs-GaAs; Fabry-Perot resonator; active layer; integrated Bragg reflector; optical pumping; quantum efficiencies; reflectivity; semiconductor laser; surface-emitting laser; threshold pump power;
Journal_Title :
Electronics Letters
