Title :
Luminescent Er doped microparticles in a semiconductor matrix
Author :
Favennec, P.N. ; L´Haridon, H. ; Moutonnet, D. ; Salvi, M. ; Papadopoulo, A.C.
Author_Institution :
CNET, Lannion, France
Abstract :
The rare earth element erbium was implanted into various semiconductors. Photoluminescence of the erbium implanted layer is studied. The peak wavelength is centred at 1.54 mu m wavelength and has about the same maximum intensity whatever the host material is. Results of cathodoluminescence from a scanning electron microscope revealed that the 1.54 mu m emission is not uniformly dispersed at the surface. The 1.54 mu m emission could be from microparticles of Er-rich compounds.
Keywords :
cathodoluminescence; erbium; ion implantation; photoluminescence; scanning electron microscope examination of materials; semiconductor doping; 1.54 micron; cathodoluminescence; luminescence; microparticles; peak wavelength; scanning electron microscope; semiconductor matrix;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900999
