DocumentCode :
1316661
Title :
A new spin on the MOSFET
Author :
Dyball, Helen
Author_Institution :
IET, Stevenage, UK
Volume :
47
Issue :
18
fYear :
2011
Firstpage :
1007
Lastpage :
1007
Abstract :
Highly efficient power-gating systems beyond conventional CMOS technology could be realised using a new non-volatile flip-flop design based on a ´pseudo-spin-MOSFET´ (PSMOSFET), researchers in Japan have shown. The non-volatile flip-flop architecture is faster and uses less power than other backup architectures using ordinary flip-flops, and is compatible with existing CMOS fabrication and circuit technologies.
Keywords :
CMOS logic circuits; MOSFET; flip-flops; low-power electronics; CMOS fabrication; CMOS logic system; nonvolatile flip-flop architecture; nonvolatile flip-flop design; power-gating system; pseudo-spin-MOSFET;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.2623
Filename :
6012940
Link To Document :
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