Title :
80 GHz 4:1 frequency divider IC using nonself-aligned InP/InGaAs heterostructure bipolar transistors
Author :
Nakajima, H. ; Sano, E. ; Ida, M. ; Yamahata, S.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
1/6/2000 12:00:00 AM
Abstract :
80 GHz operation has been attained for a divide-by-four frequency divider IC fabricated with non-self-aligned InP/InGaAs heterostructure bipolar transistors. To the authors´ knowledge, this is the fastest digital frequency divider IC reported to date. The measured maximum toggle frequency of 80 GHz was the upper limit of the measurement setup
Keywords :
III-V semiconductors; bipolar logic circuits; frequency dividers; gallium arsenide; high-speed integrated circuits; indium compounds; integrated circuit measurement; 80 GHz; III-V semiconductors; InP-InGaAs; digital frequency divider; divide-by-four frequency divider IC; maximum toggle frequency; measurement setup; nonself-aligned heterostructure bipolar transistors; upper limit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000111
