• DocumentCode
    1316734
  • Title

    Ultra-low power source coupled FET logic gate configuration in GaAs MESFET technology

  • Author

    Bushehri, E. ; Bratov, V. ; Starosselski, V. ; Schlichter, T. ; Milenkovic, S. ; Timochenkov, V.

  • Author_Institution
    Microelectron. Centre, Middlesex Univ., London, UK
  • Volume
    36
  • Issue
    1
  • fYear
    2000
  • fDate
    1/6/2000 12:00:00 AM
  • Firstpage
    36
  • Lastpage
    38
  • Abstract
    A source coupled FET logic gate configuration is proposed for achieving high speed and low power dissipation. A frequency of 2.4 GHz has been achieved, based on measurements on a divide-by-20 frequency divider, dissipating only 12 mW from a single 2 V power supply. The performance of the gate in terms of speed is comparable to that of the previously reported high speed source coupled FET logic while dissipating a fraction of the power
  • Keywords
    III-V semiconductors; MESFET integrated circuits; field effect logic circuits; frequency dividers; gallium arsenide; high-speed integrated circuits; logic gates; low-power electronics; 12 mW; 2 V; 2.4 GHz; GaAs; III-V semiconductors; MESFET technology; divide-by-20 frequency divider; gate speed; high speed ICs; power dissipation; source coupled FET logic gate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000016
  • Filename
    830502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316734