Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers

Author

Huang, Xiaodong ; Stintz, A. ; Hains, Chris P. ; Liu, G.T. ; Cheng, I. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

36

Issue

1

fYear

2000

fDate

1/6/2000 12:00:00 AM

Firstpage

41

Lastpage

42

Abstract

Efficient, continuous-wave lasing operation of narrow-stripe, oxide-confined, long-wavelength InAs quantum dot lasers in the ground state (λ≃1.28 μm) has been achieved at temperatures up to 100°C. The lasers have a very low threshold current density (J_th=24 A/cm²), high differential quantum efficiency (55), and very low internal loss (α_i=0.77 cm ^-1)

Keywords

III-V semiconductors; current density; ground states; indium compounds; laser beams; laser variables measurement; molecular beam epitaxial growth; optical fabrication; optical losses; quantum well lasers; semiconductor quantum dots; 1.28 mum; 100 C; InAs; InAs lasers; continuous-wave lasing operation; differential quantum efficiency; ground state; high-temperature CW lasing operation; internal loss; narrow-stripe oxide-confined long-wavelength lasers; oxide-confined long-wavelength; quantum dot lasers; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000124

Filename

830505