Title :
Very low voltage, normally-off asymmetric Fabry-Perot reflection modulator
Author :
Whitehead, Mark ; Rivers, A. ; Parry, Guillaume ; Roberts, Jeffrey S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
Using the electro-absorptive properties of approximately=150 AA quantum wells in an asymmetric Fabry-Perot modulator (AFPM), a normally-off reflection modulator with very low drive voltage was demonstrated. With this device contrasts of more than 6 Db at normal incidence in reflection have been achieved, with a voltage swing of only 3.5 V and \n\n\t\t
Keywords :
electro-optical devices; integrated optics; optical modulation; semiconductor quantum wells; 150 angstroms; 3 dB; AFPM; GaAs-AlGaAs quantum well; MQW optical modulators; electro-absorptive properties; insertion loss; low drive voltage; normal incidence; normally-off asymmetric Fabry-Perot reflection modulator; semiconductor multiple quantum well; voltage swing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901018
