• DocumentCode
    1316784
  • Title

    Very low voltage, normally-off asymmetric Fabry-Perot reflection modulator

  • Author

    Whitehead, Mark ; Rivers, A. ; Parry, Guillaume ; Roberts, Jeffrey S.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
  • Volume
    26
  • Issue
    19
  • fYear
    1990
  • Firstpage
    1588
  • Lastpage
    1590
  • Abstract
    Using the electro-absorptive properties of approximately=150 AA quantum wells in an asymmetric Fabry-Perot modulator (AFPM), a normally-off reflection modulator with very low drive voltage was demonstrated. With this device contrasts of more than 6 Db at normal incidence in reflection have been achieved, with a voltage swing of only 3.5 V and \n\n\t\t
  • Keywords
    electro-optical devices; integrated optics; optical modulation; semiconductor quantum wells; 150 angstroms; 3 dB; AFPM; GaAs-AlGaAs quantum well; MQW optical modulators; electro-absorptive properties; insertion loss; low drive voltage; normal incidence; normally-off asymmetric Fabry-Perot reflection modulator; semiconductor multiple quantum well; voltage swing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901018
  • Filename
    83051
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316784