• DocumentCode
    1316799
  • Title

    High-frequency log-domain current-mode multiphase sinusoidal oscillator

  • Author

    Prommee, Pipat ; Sra-ium, N. ; Dejhan, Kobchai

  • Author_Institution
    Dept. of Telecommun. Eng., King Mongkut´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
  • Volume
    4
  • Issue
    5
  • fYear
    2010
  • fDate
    9/1/2010 12:00:00 AM
  • Firstpage
    440
  • Lastpage
    448
  • Abstract
    This study describes the design of a multiphase sinusoidal oscillator (MSO) based on log-domain filtering concept. The circuit is a direct realisation of a first-order differential equation for obtaining the inverting and non-inverting low-pass filters. Each low-pass filter comprises only a grounded capacitor and four transistors. The proposed MSO can be instantaneously controlled over a very wide frequency range by controlling the current for the oscillation frequency and oscillation condition which indicates the proposed MSO´s suitability in high-frequency applications. A validated bipolar junction transistor (BJT) model is used in SPICE simulation operated from a single power supply as low as 2.5´V. The oscillation frequency is controlled over four decades of frequency. The total harmonic distortions for three phase (11.5´MHz) and four phase (7´MHz) are, respectively, obtained around 2.4 and 2.2´ which enables them to be fully integrated in telecommunication systems. The power consumption is around 5.5´mW for 100´´A bias current. Moreover, experimental results of three-phase MSO are included.
  • Keywords
    SPICE; bipolar transistors; capacitors; circuit simulation; current-mode circuits; harmonic distortion; low-pass filters; oscillators; MSO; SPICE simulation; bias current; first-order differential equation; grounded capacitor; harmonic distortions; high-frequency log-domain current-mode multiphase sinusoidal oscillator; log-domain filtering concept; noninverting low-pass filters; oscillation condition; oscillation frequency; power consumption; telecommunication systems; transistors; validated BJT model;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds.2009.0281
  • Filename
    5567028