• DocumentCode
    1316907
  • Title

    GaAs/Al0.3Ga0.7As multiquantum well dual focus Fresnel lens-modulator

  • Author

    Xu, J. ; Qasaimeh, O. ; Bhattacharya, P.K. ; Huffaker, D. ; Deppe, D.

  • Author_Institution
    Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    36
  • Issue
    1
  • fYear
    2000
  • fDate
    1/6/2000 12:00:00 AM
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    A bias-dependent dual focus Fresnel lens-modulator, based on the quantum confined Stark effect in a GaAs/Al0.3Ga0.7As multiquantum well pin diode, is demonstrated. A focused intensity modulation of a factor of 7, primarily due to the electroabsorption effect, is obtained with a bias change of 12 V
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; intensity modulation; lenses; p-i-n photodiodes; quantum confined Stark effect; quantum well devices; semiconductor quantum wells; GaAs-Al0.3Ga0.7As; GaAs/Al0.3Ga0.7As multiquantum well dual focus Fresnel lens-modulator; bias change; bias-dependent dual focus Fresnel lens-modulator; electroabsorption effect; focused intensity modulation; multiquantum well dual focus Fresnel lens-modulator; multiquantum well pin diode; quantum confined Stark effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000137
  • Filename
    830531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316907