AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

Author

Shelton, B.S. ; Huang, J.J. ; Lambert, D.J.H. ; Zhu, T.G. ; Wong, M.M. ; Eiting, C.J. ; Kwon, H.K. ; Feng, M. ; Dupuis, R.D.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

36

Issue

1

fYear

2000

fDate

1/6/2000 12:00:00 AM

Firstpage

80

Lastpage

81

Abstract

Heterojunction bipolar transistors based on aluminium gallium nitride/gallium nitride (AlGaN/GaN) structures have been fabricated and characterised. The devices were grown by metal organic chemical vapour deposition on c-plane sapphire substrates. The Npn structure consists of an n-GaN layer followed by an n⁺-GaN subcollector contact, an unintentionally doped GaN collector, p-GaN base, and an N-Al_0.1G_0.9N emitter with n⁺-GaN contact. Devices yielded good transistor performance with a DC current gain as high as 100 at room temperature

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; heterojunction bipolar transistors; semiconductor device measurement; semiconductor growth; wide band gap semiconductors; Al₂O₃; AlGaN/GaN heterojunction bipolar transistors; DC current gain; GaN-Al_0.1Ga_0.9N; Gummel plot; N-Al_0.1G_0.9N emitter; Npn structure; base-collector junction; base-emitter junction; c-plane sapphire substrates; metal organic chemical vapour deposition; n-GaN layer; n⁺-GaN contact; n⁺-GaN subcollector contact; p-GaN base; room temperature; transistor performance; unintentionally doped GaN collector;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000053

Filename

830534